| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress destruction of data being kept by a memory cell when the data are read out from the memory cell. <P>SOLUTION: The semiconductor storage device comprises: a memory cell array in which a plurality of memory cells are arrayed in the matrix state; a plurality of word lines connected to a row direction of the plurality of memory cells; a plurality of bit lines connected to a column direction of the plurality of memory cells; and a row selection section for multiply selecting the plurality of word lines. An equation of N<SB POS="POST">cell</SB>/N<SB POS="POST">WL</SB>≤(4×C<SB POS="POST">bl</SB>×V<SB POS="POST">DD</SB>)/(I<SB POS="POST">cell</SB>×T<SB POS="POST">cyc</SB>) is satisfied when such assumption are made that: the number of memory cells connected respectively to the plurality of bit lines is N<SB POS="POST">cell</SB>, a unit of the number of word lines multiply selected by the row selection section is N<SB POS="POST">WL</SB>, a value of a capacitance of the bit lines divided by N<SB POS="POST">cell</SB>is C<SB POS="POST">bl</SB>, a power source voltage is V<SB POS="POST">DD</SB>, respective operation frequency of the plurality of memory cells is T<SB POS="POST">cyc</SB>, and a target value of a current read out through the plurality of respective bit lines is I<SB POS="POST">cell</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
