| 摘要 |
To provide a substrate processing method and a semiconductor chip manufacturing method that enable low-cost formation of a mask for etching using plasma etching. During formation of a mask used in plasma dicing for separating a semiconductor wafer 1 into discrete semiconductor chips 1e by means of etching using plasma processing, there is adopted a method including printing a lyophobic liquid in an area on a rear surface 1b that is to be an objective of etching, thereby forming a lyophobic pattern made up of lyophobic films 3; supplying a low viscosity resin 4a and a high viscosity resin 4b, in this sequence, to the rear surface 1b on which the lyophobic pattern is formed, thereby forming a resin film 4 that is thicker than the lyophobic films 3 in an area where the lyophobic films 3 are not present; and curing the resin film 4, to thus form a mask 4* that covers an area except for the area to be etched. Thus, a mask for etching purpose can be formed at low cost without use of a high-cost method, like photolithography.
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