| 发明名称 |
Magnetic Storage Element Utilizing Improved Pinned Layer Stack |
| 摘要 |
A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer. |
| 申请公布号 |
US2012012952(A1) |
申请公布日期 |
2012.01.19 |
| 申请号 |
US20100837535 |
申请日期 |
2010.07.16 |
| 申请人 |
CHEN WEI-CHUAN;KANG SEUNG H.;ZHU XIAOCHUN;LI XIA;QUALCOMM INCORPORATED |
发明人 |
CHEN WEI-CHUAN;KANG SEUNG H.;ZHU XIAOCHUN;LI XIA |
| 分类号 |
H01L29/82;H01L21/02 |
主分类号 |
H01L29/82 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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