发明名称 |
SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
To provide a semiconductor transistor without variation in threshold voltage of an FET and a method of manufacturing the semiconductor transistor, the semiconductor transistor includes: a substrate; a first compound semiconductor layer formed above the substrate; a second compound semiconductor layer formed on the first compound semiconductor layer and having a bandgap larger than a bandgap of the first compound semiconductor layer; an oxygen-doped region formed by doping at least part of the second compound semiconductor layer with oxygen; a third compound semiconductor layer formed on the second compound semiconductor layer; a source electrode electrically connected to the first compound semiconductor layer; a drain electrode electrically connected to the first compound semiconductor layer; and a gate electrode formed on and in contact with the oxygen-doped region. |
申请公布号 |
US2012012893(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113177913 |
申请日期 |
2011.07.07 |
申请人 |
NAKAZAWA KAZUSHI;PANASONIC CORPORATION |
发明人 |
NAKAZAWA KAZUSHI |
分类号 |
H01L29/812;B82Y99/00;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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