| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus that reduces a noise caused by a dark current generated in an element separation region for separating a reset transistor or an amplifying transistor from a photoelectric conversion part, and that is advantageous to miniaturization of pixels. <P>SOLUTION: A photoelectric conversion part, an FD (Floating Diffusion), and a transfer transistor are arranged in a matrix in a first pixel region, in pixel units. An amplifying transistor and a reset transistor are arranged in a second pixel region. A first element separation part is arranged in the first pixel region, and a second element separation part is arranged in the second pixel region. An amount that an insulating film protrudes into a semiconductor substrate in the first element separation part is smaller than an amount that the insulating film protrudes into the semiconductor substrate in the second element separation part. Light is entered into the photoelectric conversion part from a second major surface side opposite to a first major surface side on which a wiring is arranged. <P>COPYRIGHT: (C)2012,JPO&INPIT |
