VERTICAL NON-VOLATILE MEMORY DEVICE

摘要

A vertical non-volatile memory device includes a semiconductor pattern disposed on a substrate; and a plurality of transistors of first through n-th layers that are stacked on a side of the semiconductor pattern at predetermined distances from each other, wherein the transistors are spaced apart and insulated from one another at the predetermined distances via air gap, where n is a natural number equal to or greater than 2.