发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles. |
申请公布号 |
US2012015508(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113242789 |
申请日期 |
2011.09.23 |
申请人 |
IWASAKI SHINYA;KAMEI AKIRA;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
IWASAKI SHINYA;KAMEI AKIRA |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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