发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. |
申请公布号 |
US2012015499(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201013256328 |
申请日期 |
2010.09.28 |
申请人 |
SASAKI MAKOTO;HARADA SHIN;NISHIGUCHI TARO;OKITA KYOKO;NAMIKAWA YASUO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI MAKOTO;HARADA SHIN;NISHIGUCHI TARO;OKITA KYOKO;NAMIKAWA YASUO |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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