MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE OBTAINED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a group III nitride crystal to which silicon is homogeneously doped at a high concentration in an in-plane direction and a film thickness direction achieving excellent controllability and reproducibility.

SOLUTION: The method of manufacturing the group III nitride crystal includes a process to prepare a ground substrate in a crystal growth furnace and a growth process to grow the group III nitride crystal on the ground substrate by reacting halides of group III elements with a compound including nitrogen element. The method of manufacturing the group III nitride crystal comprises supplying further a halogen element containing substance and a silicon containing substance to the crystal growth furnace at the growth process from the same lead-in tube.

COPYRIGHT: (C)2012,JPO&INPIT