| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a cross point memory of 1R structure, which includes a variable resistance element having rectification, and is capable of suppressing a sneak path current. <P>SOLUTION: The nonvolatile semiconductor memory device has a memory cell array of 1R structure. The memory cell array is configured by using a nonvolatile variable resistance element 1 having a variable resistor including a metal oxide film 12, the resistance which changes according to an oxygen density in the film, and first and second electrodes 11 and 13 with the variable resistor sandwiched therebetween. The first electrode 11 and the variable resistor make a junction of rectification through a rectification junction layer 15 which includes an oxide layer 11a and a layer (oxygen-deficient layer)12a of the metal oxide film 12 with its oxygen density lower than that estimated based on a stoichiometric composition. Application of a voltage to the variable resistance element causes oxygen to move between the first electrode 11 and metal oxide film 12, and the change in thickness of the oxygen depletion layer 12a changes the resistance of the metal oxide film 12 and allows the variable resistance element to exhibit rectification. The thickness of the oxygen depletion layer 12a is set to allow the variable resistance element 1 to exhibit an adequate rectification. <P>COPYRIGHT: (C)2012,JPO&INPIT |
