发明名称 |
Packaging Structure and Method |
摘要 |
A method of making a semiconductor device includes providing a substrate and forming a conductive layer on the substrate. The conductive layer includes a first metal. A semiconductor die is provided. A bump is formed on the semiconductor die. The bump includes a second metal. The semiconductor die is positioned proximate to the substrate to contact the bump to the conductive layer and form a bonding interface. The bump and the conductive layer are metallurgically reacted at a melting point of the first metal to dissolve a portion of the second metal from an end of the bump. The bonding interface is heated to the melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer. A width of the conductive layer is no greater than a width of the bump.
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申请公布号 |
US2012013005(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113245181 |
申请日期 |
2011.09.26 |
申请人 |
AHMAD NAZIR;KWON YOUNG-DO;TAM SAMUEL;KIM KYUNG-MOON;PENDSE RAJENDRA D.;STATS CHIPPAC, LTD. |
发明人 |
AHMAD NAZIR;KWON YOUNG-DO;TAM SAMUEL;KIM KYUNG-MOON;PENDSE RAJENDRA D. |
分类号 |
H01L23/48;H01L21/56;H01L21/60;H01L21/603 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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