发明名称 |
HIGH-K GATE DIELECTRIC OXIDE |
摘要 |
A dielectric such as a gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.
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申请公布号 |
US2012015488(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113245348 |
申请日期 |
2011.09.26 |
申请人 |
AHN KIE Y.;FORBES LEONARD |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L21/336;H01L21/28;H01L21/283;H01L21/316;H01L21/8239;H01L29/51 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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