METHOD OF MANUFACTURING SILICON SUBSTRATE, AND SILICON SUBSTRATE

摘要

The present invention is a method of manufacturing a silicon substrate, which is provided with: a first heat treatment process for implementing a quick heat treatment onto a silicon substrate, by using a quick-heating and quick-cooling apparatus, and maintaining the silicon substrate in a first temperature that is higher than 1,300°C and not higher than the melting point of silicon, and in a first atmosphere comprising nitride-film forming atmosphere gas, noble gas, and/or oxidized gas, for 1-60 seconds; and a second heat treatment process, after the first heat treatment process, for controlling the temperature and atmosphere to be a second temperature and a second atmosphere, wherein generation of defects due to vacancies inside the silicon substrate is inhibited, and implementing a quick heat treatment to the silicon substrate in the controlled second temperature and second atmosphere. Provided thereby is a method of manufacturing a silicon substrate, and a silicon substrate manufactured with the method, wherein defects (RIE defects) to be detected by the RIE method, such as oxygen precipitates, COP, or OSF, do not exist down to a depth of at least 1 µm from the surface, which is to be the range wherein devices are to be made, and wherein the lifetime will be 500 µsec or more.