发明名称 FILM FORMATION METHOD AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a film formation method that prevents, when three or more films are formed, the component of a first film from being contained in a third film. <P>SOLUTION: In the formation of a multilayer film including three or more films by a film formation apparatus 100 including an upper electrode 104 and a lower electrode 102, a first film 112 is formed with a substrate 110 provided on the lower electrode 102, a second film 114 is formed on the first film 112 with a distance between the upper electrode 104 and the substrate 110 set longer than that when the first film 112 is formed, and a third film 116 is formed on the second film 114 with the distance between the upper electrode 104 and the substrate 110 set shorter than that when the second film 114 is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012015403(A) 申请公布日期 2012.01.19
申请号 JP20100152055 申请日期 2010.07.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 IENAGA TAKASHI;HAKODA MOTOJI;KATO ERIKA
分类号 H01L21/314;C23C16/50;H01L21/205;H01L21/336;H01L29/786 主分类号 H01L21/314
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