| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a semiconductor memory device which can be microfabricated and can reduce leakage current to a substrate, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor memory device comprises a plurality of diffusion bit lines 2, embedded insulating films 3 provided on a plurality of the diffusion bit lines 2 respectively, a trap film 4 provided between a plurality of the diffusion bit lines 2, a plurality of word lines 5 intersecting a plurality of the diffusion bit lines 2, a plurality of first injection diffusion layers 7a connected electrically with the corresponding diffusion bit lines 2 respectively, and element isolation regions 8 which electrically isolate a plurality of the first injection diffusion layers 7a respectively. An insulating film 11 is provided in a region from the top face of a word line 5x which is the closest to a plurality of the first injection diffusion layers 7a among a plurality of the word lines 5 to the end of the first injection diffusion layer 7a side of the diffusion bit line 2 and the element isolation region 8. <P>COPYRIGHT: (C)2012,JPO&INPIT |
