| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable a depth of a contact hole for forming a gate contact plug to be controlled properly. <P>SOLUTION: A semiconductor device 1 has: a first insulator pillar 21 surrounding an active region AR; a second insulator pillar 22 having a side face 22s opposite to a side face 21s on the active region AR side of the first insulator pillar 21 in y direction; an insulating film 31 covering top faces of the first and second insulator pillars 21 and 22; a second gate electrode 23 electrically connected with a first gate electrode 16, and that covers at least the side faces 21s and 22s; and a gate contact plug 42 provided inside a contact hole on whose bottom face the insulating film 31 and the second gate electrode 23 are exposed, and that electrically connected with a top face of the second gate electrode 23. A distance between the side faces 21s and 22s is shorter than a length of the gate contact plug 42 in x direction. The gate contact plug 42 is electrically connected with the second gate electrode 23 in a region between the side faces 21s and 22s. <P>COPYRIGHT: (C)2012,JPO&INPIT |
