| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a solid-state imaging device provided with an intra-layer lens which is formed without expanding an interval to and from a light-receiving section and has a half value width corresponding to the wavelength of each transmitted light, and a manufacturing method thereof. <P>SOLUTION: The solid-state imaging device comprises a plurality of light-receiving sections 13 arranged in matrix form on the surface of a semiconductor substrate 11; light-shielding film 17 which includes openings 17b formed at positions corresponding to the light-receiving sections; plural-color color filters 23 which select the wavelength of light to be received in the light-receiving sections; a microlens 24 disposed on the color filers corresponding to the light-receiving sections; and intra-layer lenses 20 which are disposed inside inter-layer insulation film 18 between the color filters and light-receiving sections corresponding to the light-receiving sections and are convex-shaped toward the light-receiving sections. A pair of lens control layers are formed on the light-shielding film in a manner as to sandwich at least one of the plural light-receiving sections, the formed intervals of the lens control layers differing, and the half value widths of the intra-layer lenses differing, according to the wavelength of light to be received in the light-receiving sections. <P>COPYRIGHT: (C)2012,JPO&INPIT |
