| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element such as a ridge InGaAlAs-based DFB laser element with stability behavior by improving heat radiation performance of an HR film end face without lowering the reflection rate of the HR film end face and by improving heat radiation performance of a ridge. <P>SOLUTION: The semiconductor laser element 22 comprises a high-reflection coating structure 24 having a semiconductor laser 23 provided with an HR film 18 of a dielectric multilayer film on one end face and a transparent radiation block 19 provided with an adjustment layer 18c with a low refractive index on one end face. The adjustment layer 18c is in contact with the HR film 18 provided on the semiconductor laser 23. The semiconductor laser element 22 further comprises a heat radiation structure having a semiconductor laser and a heat radiation block provided with a side electrode and an upper surface electrode pad connected to the side electrode. The side electrode of the heat radiation block is in contact with a surface electrode of the semiconductor laser 23. <P>COPYRIGHT: (C)2012,JPO&INPIT |
