DRY ETCHING AGENT AND DRY ETCHING METHOD

摘要

A dry etching agent which comprises (A) 1,3,3,3- tetrafluoropropene, (B) at least one additive gas selected from the group consisting of H2, O2, CO, O3, CO2, COCl2, CF3OF, COF2, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HI, HBr, HCl, NO, NH3, and YFn [wherein Y is Cl, Br or I; n is an integer satisfying the relationship: 1=n=7], and (C) an inert gas. The dry etching agent has little influence on the global environment, can dramatically widen the process window, and can accommodate, without a special substrate-exciting operation or the like, fabrication which necessitates a small side etch ratio and a high aspect ratio.