| 摘要 |
A light emitting diode is provided to prevent heat generation due to current concentration by forming a dielectric sidewall in an N-semiconductor layer to uniformly supply a current to the whole region of an active layer. An N-semiconductor layer(120), an active layer(130), and a P-semiconductor layer(140) are laminated on an upper portion of a substrate(100). Parts from the P-semiconductor layer to the N-semiconductor layer are mesa-etched. A dielectric sidewall is formed on an upper surface of the N-semiconductor layer of the mesa-etched region and from an inside of the N-semiconductor layer on the same line to the same line of the upper surface of the P-semiconductor layer. A transparent electrode is formed on the dielectric sidewall and the upper portion of the N-semiconductor layer. An N-electrode(160) is formed on the mesa-etched region of the N-semiconductor later. A P-electrode(170) is formed on the upper portion of the transparent electrode. |
