发明名称 Photovoltaic cell and methods for forming a back contact for a photovoltaic cell
摘要 <p>PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL : Methods are provided for forming a back contact (12) for a photovoltaic cell (10) that includes at least one semiconductor layer (22, 24). One method includes depositing at least one back contact material (16) on a metal contact (20). The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer (22) comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer (30) that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell (10) is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer (30) of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer. rN CCM Kj rI r t V-4Y</p>
申请公布号 AU2011203136(A1) 申请公布日期 2012.01.19
申请号 AU20110203136 申请日期 2011.06.28
申请人 GENERAL ELECTRIC COMPANY 发明人 KOREVAAR, BASTIAAN ARIE;ROJO, JUAN CARLOS;AHMAD, FAISAL RAZI;VERNOOY, DAVID WILLIAM
分类号 H01L31/0224;H01L31/18 主分类号 H01L31/0224
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