STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a semiconductor device is provided. The method includes: providing a semiconductor substrate (1000); forming gate electrode lines (1004) on the semiconductor substrate (1000); forming sidewalls (1005) at both sides of the gate electrode lines (1004); forming source/drain regions on the semiconductor substrate (1000) at both sides of the gate electrode lines (1004); forming contact holes (1012, 1014) on the gate electrode lines (1004) or the source/drain regions; wherein the step of cutting the gate electrode lines (1004) is carried out to form isolated gates (1009), after the step of forming the sidewalls (1005), before the completion of the process of forming the contact holes (1012, 1014). The semiconductor device produced by the method is also provided.