| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element having improved light distribution characteristics. <P>SOLUTION: The light emitting element 1 of the present invention comprises an optical semiconductor layer 11 with multilayered semiconductor layers and a pari of electrodes 12 for applying a voltage to the optical semiconductor layer 11 to cause the optical semiconductor layer 11 to emit light. The pair of electrodes 12 has a one-sided electrode (second electrode) 14 which reflects light emitted by the optical semiconductor layer 11. The one-sided electrode 14 includes a first transparent electrode layer 14a disposed on the optical semiconductor layer 11 and having a refraction index smaller than that of a topmost semiconductor layer included in the optical semiconductor layer 11, a second transparent electrode layer 14b disposed on the first transparent electrode layer 14a and having a refraction index larger than that of the first transparent semiconductor layer 14a, and a reflective electrode layer 14c disposed on the second transparent electrode layer 14b for reflecting light penetrated through the second transparent electrode layer 14b to the optical semiconductor layer 11 direction. The light emitted by the optical semiconductor layer 11 can be favorably diffused in a direction perpendicular to a thickness direction of the optical semiconductor layer 11, which improves light distribution characteristics of the light emitting element 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
