| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material which gives a resist film in which line edge roughness is small at high resolution exceeding that of a conventional positive resist material, a pattern form after exposure is good, and further outstanding etching resistance is shown; and to provide a polymer compound suitable especially as a base resin of a chemically amplified positive resist material, a positive resist material using the same, a polymerizable monomer which gives the polymer compound, and a method for forming a pattern. <P>SOLUTION: The polymerizable monomer is shown by general formula (1). In the formula, R<SP POS="POST">1</SP>is a hydrogen atom or a methyl group, R<SP POS="POST">2</SP>is a hydrogen atom or a 1-4C alkyl group, R<SP POS="POST">3</SP>is an acid unstable group, and m an integer of 1-4. In the positive resist material which takes the polymer compound obtained by carrying out (co)polymerization of the polymerizable monomer as a base resin, an alkali dissolution rate contrast before and after exposure is sharply high, resolution nature is high, a pattern form and line edge roughness after exposure are good, especially moreover, an acid diffusion rate is controlled, and outstanding etching resistance is shown. Therefore, especially a positive resist material suitable as a fine pattern-forming material for VLSI production or a photomask, a pattern-forming material for EUV exposure or the like, and especially a chemically amplified positive resist material can be obtained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
