| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new manufacturing method of a semiconductor device including a polishing process. <P>SOLUTION: The manufacturing method of a semiconductor device comprises: forming an insulation film on the upper part of a semiconductor substrate; forming grooves including a dummy groove having a first depth, a wiring groove having a second depth deeper than the first depth, and a via hole provided on the bottom surface of the wiring groove, on the insulation film; depositing a conductive material in the dummy groove, the wiring groove, and the via hole, and on the upper part of the insulation film; and polishing and removing the conductive material on the upper part of the insulation film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
