| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an active matrix substrate which can be manufactured at a low cost and allows the reduction in off-leak current of TFTs. <P>SOLUTION: In an active matrix substrate 201, a plurality of pairs of TFTs 104 and pixel electrodes 9 are arranged like an array, where each TFT 104 includes a gate electrode 2 and a gate insulating film 3 which are formed on a substrate 1, a channel layer comprising a crystalline semiconductor film 41 and/or an amorphous semiconductor film 42, a source electrode 5s, and a drain electrode 5d. The channel layer is formed in a formation area of the gate electrode 2, the source electrode 5s and the drain electrode 5d are formed in a formation area of the channel layer, a source line 5a is formed in a position spaced from the gate electrode 2 on the gate insulating film 3, and the source line 5a is connected to the source electrode 5s via a connection line 6a comprising an oxide conductive film which is formed just on the source electrode 5s and is extended from on the source electrode 5s. <P>COPYRIGHT: (C)2012,JPO&INPIT |
