| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a preferable separation structure of wells in a configuration in which a photoelectric conversion part and a peripheral circuit part or part of a pixel circuit are separately provided on different substrates and are electrically connected to each other. <P>SOLUTION: A solid-state imaging device according to present invention comprises a plurality of pixels having photoelectric conversion parts and amplification transistors amplifying signals generated by the photoelectric conversion parts, and comprises: a first substrate on which the plural photoelectric conversion parts are arranged; and a second substrate on which the plural amplification transistors are arranged. A well with a first conductivity type in which a source region and a drain region of the amplification transistor are arranged is separately provided from a well with the first conductivity type in which a source region and a drain region of the amplification transistor which is adjacent to one another in at least one direction are arranged. <P>COPYRIGHT: (C)2012,JPO&INPIT |
