发明名称 |
METHOD OF MANUFACTURING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER BY TWO-DIMENSION PHOTONIC CRYSTAL, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a microstructure of a nitride semiconductor capable of forming the microstructure including a vacancy inside the semiconductor without greatly changing the size of a hole formed by precise control in an etching step of the semiconductor after performing a heat treatment process. <P>SOLUTION: A method of manufacturing a microstructure of a nitride semiconductor, in which a second semiconductor layer 104 consisting of a group III nitride semiconductor containing Al is formed on a major surface of a first semiconductor layer 102 consisting of a group III nitride semiconductor except for Al, includes: a first step of preparing a semiconductor structure having a pore 107 that is formed on the first semiconductor layer and penetrates the second semiconductor layer; a second step of carrying out a heat treatment of the semiconductor structure under an atmosphere containing a nitrogen element after the first step to form a crystal surface of the first semiconductor layer on at least a part of a sidewall of the pore formed on the first semiconductor layer; and a third step of forming a third semiconductor layer 111 consisting of the group III nitride semiconductor on the second semiconductor layer after the second step to cover an upper part of the pore. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012015228(A) |
申请公布日期 |
2012.01.19 |
申请号 |
JP20100148529 |
申请日期 |
2010.06.30 |
申请人 |
CANON INC |
发明人 |
HOSHINO KATSUYUKI;NAGATOMO YASUHIRO;KAWASHIMA SHOICHI;KAWASHIMA TAKESHI |
分类号 |
H01S5/343;H01S5/183 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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