发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
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申请公布号 |
US2012015514(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113243882 |
申请日期 |
2011.09.23 |
申请人 |
NOGUCHI JUNJI;OSHIMA TAKAYUSHI;MIURA NORIKO;ISHIKAWA KENSUKE;IWASAKI TOMIO;KATSUYAMA KIYOMI;SAITO TATSUYUKI;TAMARU TSUYOSHI;YAMAGUCHI HIZURU;RENESAS ELECTRONICS CORPORATION |
发明人 |
NOGUCHI JUNJI;OSHIMA TAKAYUSHI;MIURA NORIKO;ISHIKAWA KENSUKE;IWASAKI TOMIO;KATSUYAMA KIYOMI;SAITO TATSUYUKI;TAMARU TSUYOSHI;YAMAGUCHI HIZURU |
分类号 |
H01L21/3205;H01L21/768;H01L21/312;H01L21/314;H01L21/44;H01L23/52;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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