SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor structure and the method for manufacturing the same, wherein the structure comprising a semiconductor substrate: a flash memory device formed on the semiconductor substrate; wherein the flash memory device comprising: a channel region formed on the semiconductor substrate; a gate stack structure formed on the channel region; wherein the gate stack structure comprises: a first gate dielectric layer formed on the channel region; a first conductive layer formed on the first gate dielectric layer; a second gate dielectric layer formed on the first conductive layer; a second conductive layer formed on the second gate dielectric layer; a heavily doped first-conduction-type region and a heavily doped second-conduction-type region at both sides of the channel region respectively, wherein the first conduction type is opposite to the second conduction type in the type of conduction.