| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a suitable AIN layer can be grown. <P>SOLUTION: The method of manufacturing a semiconductor device includes a step for not supplying N material but supplying Al material, a step for supplying Al material and N material after the step for supplying Al material and growing an AIN layer 12 on a substrate 10 consisting of Si, and a step for growing a GaN based semiconductor layer 21 on the AIN layer 12 after the step for growing an AIN layer 12. The step for growing an AIN layer 12 is a step for growing an AIN layer 12 which satisfies a relation 76500/x<SP POS="POST">0.81</SP><y<53800/x<SP POS="POST">0.83</SP>, assuming the film thickness of the AIN layer 12 is x, and half peak width of (002) plane rocking curve of the AIN layer 12 is y. <P>COPYRIGHT: (C)2012,JPO&INPIT |
