发明名称 |
FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD OF MANUFACTURING SAME |
摘要 |
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed on a portion of the fin structure. The gate structure traverses the fin structure and separates a source region and a drain region of the fin structure, the source and drain region defining a channel therebetween. The source and drain region of the fin structure include a strained source and drain feature. The strained source feature and the strained drain feature each include: a first portion having a first width and a first depth; and a second portion disposed below the first portion, the second portion having a second width and a second depth. The first width is greater than the second width, and the first depth is less than the second depth. |
申请公布号 |
US2012012932(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US20100837093 |
申请日期 |
2010.07.15 |
申请人 |
PERNG TSU-HSIU;YEH CHIH CHIEH;CHEN TZU-CHIANG;HO CHIA-CHENG;CHANG CHIH-SHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
PERNG TSU-HSIU;YEH CHIH CHIEH;CHEN TZU-CHIANG;HO CHIA-CHENG;CHANG CHIH-SHENG |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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