| 摘要 |
The main object of the present invention is to provide a method for producing a cathode active material layer, which allows a high-purity lithium complex oxide by restraining impurities from being produced, allows a flat film, and allows orientation control. The present invention solves the above-mentioned problems by providing a method for producing a cathode active material layer, in which a cathode active material layer is formed on a substrate and contains LiXaOb (X is a transition metal element of at least one kind selected from the group consisting of Co, Ni and Mn, a=0.7-1.3, and b=1.5-2.5), characterized in that the method comprises the steps of: forming a cathode active material precursor-film on the above-mentioned substrate by a physical vapor deposition method while setting a temperature of the substrate at 300° C. or less, and performing an annealing treatment for the cathode active material precursor-film at a temperature of a crystallizable temperature of the LiXaOb or more, and characterized in that the substrate has orientation property in a surface. |
