| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having high photoelectric conversion efficiency. <P>SOLUTION: A photoelectric conversion device 10 has a I-III-VI compound semiconductor including a Group VI element which is a chalcogen element, as a main component, and includes a semiconductor layer 3 including a silicon element and an oxygen element. Moreover, a method for manufacturing the photoelectric conversion device 10 includes: a step of producing a precursor layer including a Group I element and a Group III element; and a step of producing the semiconductor layer 3 by placing the precursor layer and silicon in a calcination furnace and heating the precursor layer and the silicon while introducing gas including the chalcogen element into the calcination furnace. <P>COPYRIGHT: (C)2012,JPO&INPIT |
