| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a high photoelectric conversion efficiency. <P>SOLUTION: A method of manufacturing a photoelectric conversion device 10 includes a method of manufacturing a chalcogen compound semiconductor layer. The method of manufacturing a chalcogen compound semiconductor layer includes a heating step for heating a precursor layer provided on a substrate A and including a metal element under a chalcogen element-containing atmosphere to make a chalcogen compound semiconductor layer including the metal and chalcogen elements. The heating step includes a first step for heating under an atmosphere including the chalcogen elements of a first concentration, and a second step for heating under an atmosphere including the chalcogen elements of a second concentration lower than the first concentration after the first step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
