| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method in which oxygen plasma can be prevented from having an adverse effect on the ground of an insulating film when the insulating film formed on a substrate is etched. <P>SOLUTION: The etching method includes a first etching step for exposing an insulating film 222 to plasma treatment gas and etching the insulating film 222 halfway in the thickness direction, a deposit removing step for exposing the insulating film 222 which remains after the completion of the first etching step to oxygen plasma and removing deposits on the surface of the remaining insulating film 222, and a second etching step for exposing the remaining insulating film 222 to plasma treatment gas and etching the remaining insulating film 222. <P>COPYRIGHT: (C)2012,JPO&INPIT |
