Method for spatially determining the series resistance of a semiconductor structure

摘要

The invention relates to a method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter for a plurality of prescribed locations of the semiconductor structure and determining local series resistances for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances are each determined as a function of a global series resistance of the semiconductor structure that is identical for all local series resistances.