STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a storage element capable of power consumption.

SOLUTION: A storage element 3 is configured to store information in a storage layer 16 by applying current in a lamination direction, injecting a spin-polarized electron, and changing the direction of magnetization M1 of the storage layer 16. The storage element 3 comprises: the storage layer 16 that holds information in a magnetization state of a magnetic body; and a magnetization fixing layer 14 provided on the storage layer 16 through a tunnel barrier layer 15. The tunnel barrier layer 15 has thickness from 0.1 nm or more to 0.6 nm or less, and has interface roughness of less than 0.5 nm.

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