MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To reduce current required to cause magnetization reversal by spin injection without degrading an information retention characteristic.

SOLUTION: A magnetic storage element comprises: a reference layer 26 on which a magnetization direction is fixed to a specific direction; a recording layer 28 in which the magnetization direction is changed by spin injection; an intermediate layer 27 that separates the recording layer 28 from the reference layer 26; and a heating unit 33 that heats the recording layer 28. The material of the recording layer 28 is constituted by a magnetic body, in which the magnetization quantity at 150°C is 50% or more than that at a room temperature and the magnetization quantity at the range of 150 to 200°C is 10 to 80% of that at a room temperature.

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