| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device which can reduce an amount of a sediment generated in the course of processing an upper antiferromagnetic layer. <P>SOLUTION: The storage device comprises a storage element 10 for storing information by flowing a current in a lamination direction of layers and wires for supplying the storage element 10 with a current flowing in the lamination direction of the layers of the storage element 10. The storage element 10 includes a first magnetization fix layer 13 provided at a lower layer via a tunnel insulation layer 14 with respect to a storage layer 15, a second magnetization fix layer 17 provided at an upper layer via a tunnel insulation layer 16, a first antiferromagnetic layer 12 for fixing a magnetization direction of the first magnetization fix layer 13, and a second antiferromagnetic layer 18 having a thickness thinner than that of the first antiferromagnetic layer 12 for fixing a magnetization direction of the second magnetization fix layer 17. <P>COPYRIGHT: (C)2012,JPO&INPIT |
