| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate, which can be manufactured through an easy process while preventing a failure caused by static electricity generated in a manufacturing process, and which is suitable for inspection while maintaining thin film transistor characteristics. <P>SOLUTION: The thin film transistor array substrate includes a short ring wiring line 3 electrically connected to at least one of a gate wiring line 1 and a source wiring line 2 via a resistor 4. The resistor 4 comprises a layered body of a metal film 13, which is formed of the same layer as the source wiring line 2 and the short ring line 3 and integrally formed with the short ring line 3, a second semiconductor film 12 formed just below the metal film 13, and a first semiconductor film 11 formed just below the film 12. The feature of the resistor 4 in a plane view is formed in such a manner that: in at least a part of the region, the width W2 of the second semiconductor film 12 and the metal film 13 is smaller than the width W1 of the first semiconductor film 11; and the resistance of the resistor 4 is adjusted by the feature of the metal film 13. <P>COPYRIGHT: (C)2012,JPO&INPIT |
