| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a single crystal which is based on a melted layer method (DLCZ (Double Layer Czochralsi) method) and by which a single crystal is grown at a desired initial solid layer rate by controlling the initial solid layer rate to any value including 0. <P>SOLUTION: There is provided the method for growing a single crystal by using a single crystal growth apparatus including, in a chamber: a crucible into which a material for the single crystal is charged; a heater arranged in the periphery of the crucible; a crucible shaft for rotating the crucible; a heat-insulating material arranged at least on the side wall of the chamber; and a cooling body which is located on the outer side of the crucible shaft and on the inner side of the heater in the radial direction of the chamber and which supplies a cooling medium for cooling the crucible. In the method, the initial solid layer rate of the material for the single crystal is controlled by controlling the supply and stop of the cooling medium to the cooling body and the up and down movement, in the height direction of the chamber, of the cooling medium. <P>COPYRIGHT: (C)2012,JPO&INPIT |
