发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device includes a semiconductor substrate including a digital circuit area and an analog circuit area that is divided into an active element area disposed away from the digital circuit area and a passive element area disposed adjacent to the digital circuit area; a first well having a first conductivity type that is different from a second conductivity type of the semiconductor substrate and formed in a part of the semiconductor substrate corresponding to the passive element area; a second well having the second conductivity type and formed in the first well; a device isolation film formed on the second well; a digital circuit formed in the digital circuit area; an active element implemented by an analog circuit and formed in the active element area; and a passive element implemented by an analog circuit and formed on the device isolation film in the passive element area.
申请公布号 US2012012975(A1) 申请公布日期 2012.01.19
申请号 US201113169152 申请日期 2011.06.27
申请人 INOUE FUMIHIRO;MITSUMI ELECTRIC CO., LTD. 发明人 INOUE FUMIHIRO
分类号 H01L29/02 主分类号 H01L29/02
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