发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
A semiconductor integrated circuit device includes a semiconductor substrate including a digital circuit area and an analog circuit area that is divided into an active element area disposed away from the digital circuit area and a passive element area disposed adjacent to the digital circuit area; a first well having a first conductivity type that is different from a second conductivity type of the semiconductor substrate and formed in a part of the semiconductor substrate corresponding to the passive element area; a second well having the second conductivity type and formed in the first well; a device isolation film formed on the second well; a digital circuit formed in the digital circuit area; an active element implemented by an analog circuit and formed in the active element area; and a passive element implemented by an analog circuit and formed on the device isolation film in the passive element area. |
申请公布号 |
US2012012975(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113169152 |
申请日期 |
2011.06.27 |
申请人 |
INOUE FUMIHIRO;MITSUMI ELECTRIC CO., LTD. |
发明人 |
INOUE FUMIHIRO |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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