| 摘要 |
<p>A semiconductor heat treatment member having a CVD-SiC film, which can reduce the frequency of cleaning steps and significantly improves the throughput of wafer process, is provided. A semiconductor heat treatment member is provided, which has a characteristic that when a Fourier amplitude spectrum of a cross-sectional profile of the CVD-SiC film deposited on the semiconductor heat treatment member obtained by observing the CVD-SiC film by a laser microscope with a magnification of from 400 to 600×, is integrated in ranges of 0.01≰ω≰0.02 and 0.05≰ω≰0.2, to obtain integral values of I1 and I2, respectively, then, I1 is at least 0.9 and 12 is at least 1.6.</p> |
