| 摘要 |
A semiconductor device includes a substrate, and the substrate is, on its surface, formed with wiring patterns onto which a resist is formed. Because an outer peripheral edge line of the resist passes over througholes, the outer peripheral edge line of the resist never comes close to the wiring patterns and be in parallel thereto. Specifically, since the plurality of througholes are arranged in a matrix fashion on the substrate, a direction to which each of the wiring patterns extends from each of the througholes is sure to form a predetermined angle with respect to a direction that the througholes are aligned. Accordingly, even if an outer periphery edge portion of the resist which passes over the throuholes flows into an outside thereof, a thin film of the resist is not formed in a long thin shape, and a plating film is not formed in a long thin shape on the thin film. |
