| 摘要 |
A bonding pad structure of a semiconductor device has an increased bonding pad height to prevent an increase in mechanical stress caused by a large step difference between a metal pad, exposed through a pad window region, and a protective layer. A misalignment margin is also increased. Preferably, a second metal pad is arranged in direct contact with a first metal pad and a conductive layer pattern such as P-poly pattern. This direct contact is preferably made at an external portion, or outside, of a pad window region, thereby leaving insulation layers between the P-poly pattern and the first metal pad and between the first and second metal pads intact in the pad window regions. According to various aspects of this invention, the height of the bonding pad can be raised as high as the thickness of the remaining insulation layers to reduce mechanical stress on the bonding pad without requiring additional process steps. In addition, the step differences between the metal pad exposed through the pad window region and the protective layer can be reduced, thereby increasing the misalignment margin. |
