发明名称
摘要 Upon applying a copper strike plating to a surface of a substrate made of a copper alloy that was subjected to a heat treatment after a degreasing process and an electrolytic activating process are applied to the surface, a pulse current by which a current appears like a series of pulses only on a polarity side onto which a copper metal is deposited on the surface of the substrate is applied to the substrate in the copper strike plating such that a crystal plane showing a maximum value of an X-ray diffraction intensity of a copper strike plating layer formed on the surface of the substrate corresponds to a (111) plane as a crystal plane showing a maximum value of an X-ray diffraction intensity of the copper layer into which metal crystals made of copper are most densely filled.
申请公布号 JP4856896(B2) 申请公布日期 2012.01.18
申请号 JP20050163068 申请日期 2005.06.02
申请人 发明人
分类号 C25D5/18;C25D7/00;H01L23/50 主分类号 C25D5/18
代理机构 代理人
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