Semiconductor component, in particular radiation detector with integrated overvoltage protection

摘要

The semiconductor device (1) has a semiconductor substrate (2) in which signal charge carriers are generated by the to-be-detected radiation. An overvoltage protection element (6) is integrated in the semiconductor substrate. The overvoltage protection element is disabled when voltage of the overvoltage protection element is below breakdown voltage and is enabled when voltage of the overvoltage protection element is above breakdown voltage.