| 摘要 |
PROBLEM TO BE SOLVED: To suppress a semiconductor memory device from having an erroneous reading operation due to an off-leak current. SOLUTION: The semiconductor memory device, which is provided with a reading circuit 12 in which a plurality of memory cells M111, M112, M113, M114 are connected in parallel to a bit line BL11 through a drain electrode and data written in a memory cell is read by applying power voltage VDD to each source electrode of the plurality of memory cells and detecting a current supplied from each memory cell, is provided with a power voltage applying circuit 13 applying power voltage VDD to only the source electrode of a memory cell being word-selected. |
