发明名称 |
POROUS SILICON NITRIDE ARTICLE AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>A silicon nitride porous body (5) obtained by nitriding a molded body having metallic silicon (3) as a main component, the porous body having a porous structure with an average pore diameter of 3 mu m or above, and wherein the total content of silicon and nitrogen is 95% or above and the nitridation ratio of silicon is 90% or above. The silicon nitride porous body has a porous structure with a large average pore diameter, with a test specimen cut out from the porous body exhibiting large thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter. <IMAGE></p> |
申请公布号 |
EP1298111(B1) |
申请公布日期 |
2012.01.18 |
申请号 |
EP20020705469 |
申请日期 |
2002.03.25 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
INOUE, KATSUHIRO;MORIMOTO, KENJI;MASUDA, MASAAKI;KAWASAKI, SHINJI;SAKAI, HIROAKI |
分类号 |
C04B38/00;B01D39/20;B01D53/22;B01D53/86;B01D71/02;B01J27/24;B01J32/00;B01J35/00;B01J35/04;B01J35/10;C04B35/584;C04B35/591;F01N3/28 |
主分类号 |
C04B38/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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